EUVL Seminar Report With PPT


Silicon has been the heart of the world’s technology boom for nearly half a century, but microprocessor manufacturers have all but squeezed the life out of it. The current technology used to make microprocessors will begin to reach its limit around 2005. At that time, chipmakers will have to look to other technologies to cram more transistors onto silicon to create more powerful chips. Many are already looking at extreme-ultraviolet lithography (EUVL) as a way to extend the life of silicon at least until the end of the decade.

Potential successors to optical projection lithography are being aggressively developed. These are known as “Next-Generation Lithography’s” (NGL’s). EUV lithography (EUVL) is one of the leading NGL technologies; others include x-ray lithography, ion-beam projection lithography, and electron-beam projection lithography. Using extreme-ultraviolet (EUV) light to carve transistors in silicon wafers will lead to microprocessors that are up to 100 times faster than today’s most powerful chips, and to memory chips with similar increases in storage capacity.   



“EUVL” Seminar Report

Page Length: 23 Pages


  • Abstract
  • Introduction
  • EUVL Definition
  • Why EUVL?
  • EUVL Technology
  • How EUVL Chip making Work
  • Conclusion
  • Reference

Include with “EUVL” PPT

Page Length: 19 Pages


  • Lithography
  • Introduction to EUVL
  • Basic concepts
  • Why do we need EUVL?
  • EUVL Process
  • Basic technology for EUV
  • EUV masks
  • All Reflective Optics
  • Advantages
  • Disadvantages
  • Conclusion

Size : 3.53 MB 

Price :   ₹ 35/-

Checkout Button

Note : 1. Get Cashback on purchase this product.
           2. Get instantly Cashback in your Martcost Wallet on first user registration.


Go To All “EC” : Seminar Reports With PPT

Author: Siddharth Vairagi

Siddharth Vairagi is Cyber Security and Networking expert and consultant. He have good experience in Ethical Hacking & Web Designing. He is also a best trainer of Ethical Hacking and Web Designing.

Leave a Reply

Your email address will not be published. Required fields are marked *