Ovonic Unified Memory Seminar Report With PPT

INTRODUCTION

Ovonic unified memory (OUM) is an advanced memory technology that uses a chalcogenide alloy (GeSbTe).The alloy has two states: a high resistance amorphous state and a low resistance polycrystalline state. These states are used for the representation of reset and set states respectively. The performance and attributes of the memory make it an attractive alternative to flash memory and potentially competitive with the existing non volatile memory technology.
We are now living in a world driven by various electronic equipments. Semiconductors form the fundamental building blocks of the modern electronic world providing the brains and the memory of products all around us from washing machines to super computers. Semi conductors consist of array of transistors with each transistor being a simple switch between electrical 0 and 1. Now often bundled together in there 10â„¢s of millions they form highly complex, intelligent, reliable semiconductor chips, which are small and cheap enough for proliferation into products all around us. Identification of new materials has been, and still is, the primary means in the development of next generation semiconductors. For the past 30 years, relentless scaling of CMOS IC technology to smaller dimensions has enabled the continual introduction of complex microelectronics system functions. However, this trend is not likely to continue indefinitely beyond the semiconductor technology roadmap. As silicon technology approaches its material limit, and as we reach the end of the roadmap, an understanding of emerging research devices will be of foremost importance in the identification of new materials to address the corresponding technological requirements. If scaling is to continue to and below the 65nm node, alternatives to CMOS designs will be needed to provide a path to device scaling beyond the end of the roadmap. However, these emerging research technologies will be faced with an uphill technology challenge. For digital applications, these challenges include exponentially increasing the leakage current (gate, channel, and source/drain junctions), short channel effects, etc. while for analogue or RF applications, among the challenges are sustained linearity, low noise figure, power added efficiency and transistor matching. One of the fundamental approaches to manage this challenge is using new materials to build the next generation transistors.

DOCUMENT IN COMPRESSED FILE

  • CERTIFICATE
  • DECLARATION
  • ACKNOWLEDGEMENT

“Ovonic Unified Memory” Seminar Report

Page Length: 21 Pages

Contents:

  • Introduction
  • Review Of Memory Basics
  • Memory Device Characteristics
  • Memory Structure
  • Basic Device Operation
  • Technology And Performance
  • Comparison Of Amorphous And Crystalline States
  • Conclusion
  • References

Include with “Ovonic Unified Memory” PPT

Page Length: 16 Pages

Contents:

  • Introduction
  • Review of memory basics
  • Memory device characteristics
  • Memory Structure
  • OUM Attributes
  • OUM Architecture
  • Basic device operation
  • Technology and performance
  • Comparison of amorphous and crystalline states
  • Advantages of OUM
  • Problems/Concerns of OUM
  •  Conclusion
  •  References

Size : 877 KB 

Price :   ₹ 30/-



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Author: Siddharth Vairagi

Siddharth Vairagi is Cyber Security and Networking expert and consultant. He have good experience in Ethical Hacking & Web Designing. He is also a best trainer of Ethical Hacking and Web Designing.

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